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University of the Witwatersrand
Physics IIE (Engineering) : PHYS284 : 2002
Examination : June 2002
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Instructions: Answer all questions.
Time: 2 hours = 120 minutes
Total Marks: 120 marks
- 1.
- The relativistic expression for kinetic energy is
- (a)
- Show that this expression reduces to the normal classical
expression
at low speeds.
(6)
- (b)
- Sketch the relativistic and classical variation of kinetic energy
with velocity.
(4)
- (c)
- What approximate fractional error does one make in using
for the kinetic energy of a body if its speed is
,
and again if its speed is
? Give fractions to two significant figures.
(Hint : fractional error = (true value - approximate value)/true value).)
(7)
- (d)
- An electron in a TV tube is accelerated by a potential of 17 kV. Calculate its
- i)
- total energy,
- ii)
, the fractional mass increase,
- iii)
- velocity.
Use units of keV for both energies and mass (i.e.
), and
for velocity.
Suppose that you want to design a high resolution monitor,
- iv)
- Discuss the relativistic effects on your design,
and how important they are to consider.
(8)
[25]
- 2.
- (a)
- A linear quantum dot can be modelled as an electron in a box. It can be formed
by depositing contacts on a slab of GaAs and then applying a bias voltage
in such a way as to create a linear confining potential.
- i)
- Suppose the observed
ground-state electron energy is 0.003 eV. How big is the potential
boundary (``box'') of the quantum dot ?
(Note : for GaAs,
(7)
- ii)
- Show that this result is roughly consistent with
Heisenberg's Uncertainty Principle.
(4)
- (b)
- With regard to the Scanning Tunneling Microscope :
- i)
- Explain the principle of operation by referring to
a particle energy drawing showing clearly the three regions corresponding to the
sample, the tip and the air-gap in an idealised barrier penetration problem.
(4)
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PHYS284
June 2002 Physics IIE (Engineering)
- ii)
- The transmission coefficient of electrons through the barrier in a tunneling microscope
is given by
where
nm
.
Suppose the electronic detection system is sensitive to electrical
current changes of 0.1%. What surface height sensitivity does this correspond to.
(5)
[20]
- 3.
- (a)
- The probability of finding an electron, of a given state
of the hydrogen atom, at some distance between
and
is given by
How much more likely is a
electron to be at a distance of
from the nucleus than a distance of
?
(Use the attached table in figure
below of the normalised wave functions for the hydrogen atom.)
(8)
- (b)
- Unsöld's theorem states that for any value of the orbital quantum number
,
the probability densities summed over all possible values of
are angle independent.
- i)
- Verify this for
by showing
using the attached table in figure
below of the normalised wave functions for the hydrogen atom.
(6)
- ii)
- What is the physical meaning of this mathematical fact.
(2)
- iii)
- Which group of the periodic table contains elements demonstrating Unsöld's theorem.
(2)
- iv)
- How does the mathematical form of the probability density illuminate the properties
of these elements ?
(2)
[20]
- 4.
- (a)
- Show that electronic density of states
may be expressed as
at 0 K.
(6)
- (b)
- Now show that the total energy of the electron gas at 0 K is
by evaluating
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PHYS284
June 2002 Physics IIE (Engineering)
- and hence arrive at the result
Which is typically a few electron volts in magnitude.
(6)
- (c)
- If electrons behaved classically, what would the temperature of the metal have to be
for a similar average energy to of the electrons to be realised.
(6)
- (d)
- With respect to the Fermi-Dirac distribution, show
that if the average occupancy of a state of energy
is
at any temperature, then the average occupancy of a state of energy
is
.
(6)
[24]
- 5.
- Silver (Group I) has a molar mass of 108 g/mol, a density of
kg/m
and a Fermi energy of 5.54 eV. The resistivity is
m.
Show that the mean free path
between collisions
of the free electrons is about 50 nm.
(6)
[6]
- 6.
- (a)
- Classify the materials (a) to (f) below as metals, insulators or semi-conductors
specifying the dopant type as well where necessary.
Figure:
Various materials for Question 6(a).
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(6)
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PHYS284
June 2002 Physics IIE (Engineering)
- (b)
- By setting the number of hole and electron charge carriers equal for intrinsic
material, show that the Fermi-level is approximately in the middle of the band gap.
(6)
- (c)
- Now consider doped material. Using the following data,
 |
= |
11.7 for Si |
 |
= |
0.19 near the bottom of the conduction band in Si |
Calculate the ionisation energy of the phosphorous atom in silicon.
(5)
- (d)
- Hence explain the location of the donor state in the band gap.
(3)
- (e)
- What is the new position of the Fermi level ?
(2)
- (f)
- Compare the ionisation energy of the donor state to the energy represented by
room temperature and comment on the consequences of this for the charge
carrier concentration.
(3)
[25]
Total Marks [120]
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PHYS284
June 2002 Physics IIE (Engineering)
Figure:
Normalised wave functions of the hydrogen atom for
and 3.
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2004-03-11